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Solid State Devices

Solid State Devices. Instructor: Prof. S. Karmalkar, Department of Electrical Engineering, IIT Madras. This course discusses the physics of semiconductors, the structure and fabrication of semiconductor devices as well as the operation of them. Topics include: evolution and uniqueness of semiconductor technology, equilibrium carrier concentration, carrier transport, excess carriers, procedure for analyzing semiconductor devices, pn junctions, bipolar junction transistors, Metal-Oxide-Semiconductor(MOS) junctions, MOS Field Effect Transistors, and other types of FETs such as Junction FETs, Metal Semiconductor FETs and Heterojunction FETs. (from nptel.ac.in)

Introduction


Lecture 01 - Introduction to Solid State Devices
Lecture 02 - Evolution and Uniqueness of Semiconductor
Lecture 03 - Equilibrium Carrier Concentration: Types of Semiconductors, Thermal Equilibrium
Lecture 04 - Wave-particle Duality, Bond Model of an Intrinsic Semiconductor
Lecture 05 - Electron Hole Pair Generation and Recombination, Hole Concept, Effective Mass of a Carrier
Lecture 06 - Energy Band Model: Allowed States
Lecture 07 - Energy Band Model: Distribution of Allowed States over Energy, Fermi-Dirac Function
Lecture 08 - Energy Band Model: Fermi-Dirac Function and Fermi-Level
Lecture 09 - Extrinsic Semiconductor under Equilibrium: Bond Model
Lecture 10 - Band Model of an Extrinsic Semiconductor, Fermi-Dirac Function and Fermi-Level
Lecture 11 - Estimation of Carrier Concentration and Fermi-Level
Lecture 12 - Carrier Transport
Lecture 13 - Carrier Transport: Drift, Diffusion, Mobility
Lecture 14 - Carrier Transport: Mobility in Silicon, Resistivity in Extrinsic Silicon
Lecture 15 - Excess Carriers: Injection Level, Quasi-Fermi Level
Lecture 16 - Excess Carriers: Lifetime, Direct and Indirect Recombination, Surface Recombination
Lecture 17 - Procedure for Device Analysis
Lecture 18 - Procedure for Device Analysis (cont.)
Lecture 19 - PN Junction: Characteristics, Device Structure and Fabrication
Lecture 20 - PN Junction: Equilibrium Analysis
Lecture 21 - PN Junction: Equilibrium Analysis - Solved Examples
Lecture 22 - PN Junction: Ideal I-V Characteristics
Lecture 23 - PN Junction: I-V Characteristics with Forward Bias
Lecture 24 - Energy Band Diagram under Forward Bias, Reverse I-V Characteristics
Lecture 25 - PN Junction: Small-Signal Characteristics
Lecture 26 - Bipolar Junction Transistor: Historical Account, Device Structure
Lecture 27 - Bipolar Junction Transistor: Basics of Transistor Action
Lecture 28 - Bipolar Junction Transistor: Small-Signal Amplification
Lecture 29 - Bipolar Junction Transistor: Small-Signal Amplification (cont.)
Lecture 30 - Bipolar Junction Transistor: Common-Emitter I-V Characteristics
Lecture 31 - Bipolar Junction Transistor: Common-Emitter I-V Characteristics (cont.)
Lecture 32 - Bipolar Junction Transistor: Small-Signal Equivalent Circuit
Lecture 33 - Metal-Oxide-Semiconductor (MOS) Junction: Ideal MOS Capacitor
Lecture 34 - MOS Junction: Q-V Characteristics (cont.)
Lecture 35 - Q-V Characteristics: Non-ideal MOS Capacitor, Energy Band Diagram
Lecture 36 - MOS Junction: Low Frequency and High Frequency C-V Characteristics
Lecture 37 - MOS Junction: Body Effect - Three Terminal MOS Capacitor
Lecture 38 - MOS Field Effect Transistor: Historical Account, Device Structure
Lecture 39 - MOS FET: Common Source DC Characteristics
Lecture 40 - MOS FET: Common Source DC Characteristics (cont.)
Lecture 41 - MOS FET: Common Source DC Characteristics (cont.), Small-Signal Equivalent Circuit
Lecture 42 - Junction FETs, Metal Semiconductor FETs, Heterojunction FETs, etc.

References
Solid State Devices
Instructor: Prof. S. Karmalkar, Department of Electrical Engineering, IIT Madras. This course discusses the physics of semiconductors, the structure and fabrication of semiconductor devices as well as the operation of them.