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High Speed Devices and Circuits

High Speed Devices and Circuits. Instructor: Prof. K. N. Bhat, Department of Electrical Engineering, IIT Madras. This course discusses topics: important parameters governing the high speed performance of devices and circuits; silicon based MOSFET and BJT circuits for high speed operation and their limitations; materials for high speed devices and circuits; metal semiconductor contacts and Metal Insulator Semiconductor and MOS devices; Metal semiconductor Field Effect Transistors (MESFETs); High Electron Mobility Transistors (HEMT); Heterojunction Bipolar Transistors (HBTs); high speed Circuits; and high frequency resonant-tunneling devices. (from nptel.ac.in)

Lecture 21 - I-V Characteristics: Shockley's Model


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Lecture 01 - Introduction to Basic Concepts
Lecture 02 - Requirements for High Speed Circuits, Devices and Materials
Lecture 03 - Classification and Properties of Semiconductor Devices
Lecture 04 - Ternary Compound Semiconductors and their Applications
Lecture 05 - Ternary Compound Semiconductors and their Applications (cont.)
Lecture 06 - Crystal Structures in GaAs
Lecture 07 - Dopants and Impurities in GaAs and InP
Lecture 08 - Brief Overview of GaAs Technology for High Speed Devices
Lecture 09 - Epitaxial Techniques for GaAs and High Speed Devices
Lecture 10 - Molecular Beam Epitaxy and Liquid-Phase Epitaxy for GaAs Epitaxy
Lecture 11 - GaAs and InP Devices for Microelectronics
Lecture 12 - Metal Semiconductor Contacts for MESFET
Lecture 13 - Metal Semiconductor Contacts for MESFET (cont.)
Lecture 14 - Metal Semiconductor Contacts for MESFET (cont.)
Lecture 15 - Ohmic Contacts on Semiconductors
Lecture 16 - Fermi Level Pinning, I-V Characteristics of Schottky Barrier Diodes
Lecture 17 - Schottky Barrier Diodes: I-V Characteristics and the Non-Idealities
Lecture 18 - Schottky Barrier Diodes: I-V Characteristics and the Non-Idealities (cont.)
Lecture 19 - Causes of the Non-Idealities in Schottky Barrier Diodes (I-V Characteristics)
Lecture 20 - MESFET Operation and I-V Characteristics
Lecture 21 - I-V Characteristics: Shockley's Model
Lecture 22 - MESFET Shockley's Model and Velocity Saturation Effect
Lecture 23 - MESFET Velocity Saturation Effect on Drain Current Saturation
Lecture 24 - MESFET: Drain Current Saturation Ids due to Velocity Saturation
Lecture 25 - MESFET: Effects of Channel Length and Gate Length on I_DS and g_m
Lecture 26 - MESFET: Effects of Velocity Saturation and Velocity Field Characteristics
Lecture 27 - MESFET: Effects of Velocity Field Characteristics - Overshoot Effects
Lecture 28 - MESFET: Velocity Overshoot Effect and Self Aligned MESFET-SAINT
Lecture 29 - Self Aligned MESFET-SAINT Threshold Voltage and Subthreshold Current
Lecture 30 - Hetero Junctions
Lecture 31 - Hetero Junctions and High Electron Mobility Transistor (HEMT)
Lecture 32 - Hetero Junctions and High Electron Mobility Transistor (HEMT) (cont.)
Lecture 33 - High Electron Mobility Transistor (HEMT)
Lecture 34 - HEMT: Off Voltage, I-V Characteristics and Transconductance
Lecture 35 - HEMT: I-V Characteristics and Transconductance and Optimization
Lecture 36 - Indium Phosphide based HEMT
Lecture 37 - Pseudomorphic HEMT and Heterojunction Bipolar Transistors
Lecture 38 - Heterojunction Bipolar Transistors (HBT)
Lecture 39 - Heterojunction Bipolar Transistors (HBT) (cont.)
Lecture 40 - Heterojunction Bipolar Transistors (HBT) (cont.)
Lecture 41 - Heterojunction Bipolar Transistors (HBT) (cont.)