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EE 130: Integrated-Circuit Devices

Electrical Engineering 130: Integrated-Circuit Devices (Spring 2014, UC Berkeley). Instructor: Professor Sayeef Salahuddin. This course provides the fundamentals of basic semiconductor devices: the pn-junction diode, the bipolar junction transistor, the metal-oxide-semiconductor capacitor, and the field-effect transistor. Topics covered in this course include: an overview of electronic properties of semiconductor, metal-semiconductor contacts, pn junctions, bipolar transistors, and MOS field-effect transistors. This course will discuss properties that are significant to device operation for integrated circuits, and silicon device fabrication technology.

Introduction


Lecture 01 - Introduction, Early History of IC Devices
Lecture 02 - Semiconductors: The Bond Model, Energy Band Model, Dopants
Lecture 03 - Wave Nature of Particles, Effective Mass, Number of Carriers: Energy Band Description
Lecture 04 - Quantitative Analysis of Carrier Concentration, General Theory of N and P
Lecture 05 - Carrier Transport Mechanisms: Drift, Physics of Mobility
Lecture 06 - Drift Current, Diffusion Current, Excess Carriers
Lecture 07 - Carrier Recombination and Generation, Low Level Injection, Continuity Equations
Lecture 08 - PN Junction Diodes: Depletion Region, Built-in Potential, Electrostatics
Lecture 09 - Derivation of Current-Voltage Characteristics of Diode
Lecture 10 - Depletion Region Width, Capacitance, R-G Current, High Level Injection, Series Resistance
Lecture 11 - Reverse Breakdown, Small Signal Model, Zener Diode, Varactor Diode
Lecture 12 - Tunnel Diode, Solar Cells, LED, Metal-Semiconductor Contacts
Lecture 13 - Metal-Semiconductor Junction
Lecture 14 - I-V Characteristic of a Schottky Junction, Ohmic Contacts, Bipolar Junction Transistors
Lecture 15 - Bipolar Junction Transistors: I-V Characteristic of BJT, Ebers-Moll Model
Lecture 16 - BJT Currents: Ebers-Moll Model, Base-Width Modulation, Punchthrough
Lecture 17 - Base Transit Time, Kirk Effect, Circuit Modeling of BJT: Small Signal Model
Lecture 18 - MOS Capacitor: Structure, Equilibrium Band Diagram, Three Regimes of Operation
Lecture 19 - MOS Capacitor: Three Regimes of Operation, MOS C-V Curve
Lecture 20 - MOS Capacitor: C-V Characteristic, C-V of a MOSFET
Lecture 21 - Effective Oxide Thickness, The MOSFET, Body Bias in a MOSFET
Lecture 22 - Body Bias in a MOSFET, MOSFET I-V
Lecture 23 - Surface Mobility, Inverters, Channel Length Modulation, Velocity Saturation
Lecture 24 - Velocity Saturation, Subthreshold Current, Gate Induced Drain Leakage, MOSFET Scaling
Lecture 25 - Short Channel Effects (No Audio)
Lecture 26 - Multi-Gate MOSFETs: Channel Length Scaling, 2D Electrostatics