Electrical Engineering 130: Integrated-Circuit Devices
Electrical Engineering 130: Integrated-Circuit Devices (Spring 2014, UC Berkeley). Instructor: Professor Sayeef Salahuddin. This course provides the fundamentals of basic semiconductor devices: the pn-junction diode, the bipolar junction transistor, the metal-oxide-semiconductor capacitor, and the field-effect transistor. Topics covered in this course include: an overview of electronic properties of semiconductor, metal-semiconductor contacts, pn junctions, bipolar transistors, and MOS field-effect transistors. This course will discuss properties that are significant to device operation for integrated circuits, and silicon device fabrication technology.
| Lecture 13 - Metal-Semiconductor Junction |
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Go to the Course Home or watch other lectures:
| Lecture 01 - Introduction, Early History of IC Devices |
| Lecture 02 - Semiconductors: The Bond Model, Energy Band Model, Dopants |
| Lecture 03 - Wave Nature of Particles, Effective Mass, Number of Carriers: Energy Band Description |
| Lecture 04 - Quantitative Analysis of Carrier Concentration, General Theory of N and P |
| Lecture 05 - Carrier Transport Mechanisms: Drift, Physics of Mobility |
| Lecture 06 - Drift Current, Diffusion Current, Excess Carriers |
| Lecture 07 - Carrier Recombination and Generation, Low Level Injection, Continuity Equations |
| Lecture 08 - PN Junction Diodes: Depletion Region, Built-in Potential, Electrostatics |
| Lecture 09 - Derivation of Current-Voltage Characteristics of Diode |
| Lecture 10 - Depletion Region Width, Capacitance, R-G Current, High Level Injection, Series Resistance |
| Lecture 11 - Reverse Breakdown, Small Signal Model, Zener Diode, Varactor Diode |
| Lecture 12 - Tunnel Diode, Solar Cells, LED, Metal-Semiconductor Contacts |
| Lecture 13 - Metal-Semiconductor Junction |
| Lecture 14 - I-V Characteristic of a Schottky Junction, Ohmic Contacts, Bipolar Junction Transistors |
| Lecture 15 - Bipolar Junction Transistors: I-V Characteristic of BJT, Ebers-Moll Model |
| Lecture 16 - BJT Currents: Ebers-Moll Model, Base-Width Modulation, Punchthrough |
| Lecture 17 - Base Transit Time, Kirk Effect, Circuit Modeling of BJT: Small Signal Model |
| Lecture 18 - MOS Capacitor: Structure, Equilibrium Band Diagram, Three Regimes of Operation |
| Lecture 19 - MOS Capacitor: Three Regimes of Operation, MOS C-V Curve |
| Lecture 20 - MOS Capacitor: C-V Characteristic, C-V of a MOSFET |
| Lecture 21 - Effective Oxide Thickness, The MOSFET, Body Bias in a MOSFET |
| Lecture 22 - Body Bias in a MOSFET, MOSFET I-V |
| Lecture 23 - Surface Mobility, Inverters, Channel Length Modulation, Velocity Saturation |
| Lecture 24 - Velocity Saturation, Subthreshold Current, Gate Induced Drain Leakage, MOSFET Scaling |
| Lecture 25 - Short Channel Effects (No Audio) |
| Lecture 26 - Multi-Gate MOSFETs: Channel Length Scaling, 2D Electrostatics |